SanDisk, Toshiba to launch 16 Gigabit NAND Flash memory |
Sandisk recently announced that they along with Toshiba are planning on shipping their next generation of NAND flash memory in the first quarter of 2007 as they begin a transition in production at one of their joint wafer fabrication plants. The transition will mark the beginning of producing 56 nanometer multi-level cell flash memory chips from the previous 70 nanometer production. This will create the industry’s highest available density in a single chip MLC NAND flash memory.
This release comes after a number of recent announcements from …




