Hynix, a Korean memory semiconductor supplier, today announced it has developed what it claims to be the worlds fastest and smallest 512Mb mobile DRAM. Meeting the Joint Electron Device Engineering Council (JEDEC) standards and operating at 200MHz, it is the fastest in the industry.

The Hynix 512Mb mobile DDR SDRAM processes 1.6Gbytes of data per second, making it approximately 1.5 times faster than speed of the company’s existing mobile DRAM line.

This speedy memory is sure to boost Hynix’s competitiveness in mobile applications as the trend towards miniaturization (8mm x 10mm) continues. Hynix is expected to combine 512Mb mobile DRAM and NAND Flash modules into a multi-chip package that will further enable the design of slimmer mobile phones.

“The product will deliver the memory capacity and speed required for third generation mobile phones that provide new services, such as DMB (Digital Media Broadcast), to subscribers.” said Hynix.